Measurement of single - reflection power penalty for fiber optic terminal equipment 光纤终端设备的单反射能力损失测量
A set of icpcvd system has been designed and manufactured through the analysis of the probe diagnosed results . when the output power of the rf is within 200w and the reflection power is within 0 . 6w , a good matching effect can be gained 通过对探针诊断结果的分析,调整icp装置系统,得到很好的匹配效果,在射频输出功率为200w以内时,反射功率小于0 . 6w 。
When the output power of the rf is within 500w and the reflection power is within 10w , a good matching effect can be gained . insb - in material in the icp etching system is etched by chc1f2 plasma . through the sem analysis of the etching result , it can be observed that the sidewall is smooth , flat and anisotropic 在自制的icp干法刻蚀系统中用chclf _ 2等离子体对insb - in材料实现了干法刻蚀,通过对刻蚀样品的sem分析,观察到刻蚀后的侧壁光滑平整,有良好的各向异性。